Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

T. Ziegelwanger; M. Reisinger; K. Matoy; A. A. Medjahed; J. Zalesak; Manuel Gruber; M. Meindlhumer; J. Keckes

doi:10.1016/j.mssp.2024.108579

Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

T. Ziegelwanger, M. Reisinger, K. Matoy, A. A. Medjahed, J. Zalesak, Manuel Gruber, M. Meindlhumer, J. Keckes

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Begutachtung

Originalsprache	Englisch
Aufsatznummer	108579
Fachzeitschrift	Materials Science in Semiconductor Processing
Jahrgang	181
DOIs	https://doi.org/10.1016/j.mssp.2024.108579
Publikationsstatus	Veröffentlicht - Okt. 2024

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10.1016/j.mssp.2024.108579

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title = "Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si",

keywords = "Die bending strength, Local residual stresses, Nanosecond laser dicing, Ultra-thin Si dies, X-ray nanodiffraction",

author = "T. Ziegelwanger and M. Reisinger and K. Matoy and Medjahed, {A. A.} and J. Zalesak and Manuel Gruber and M. Meindlhumer and J. Keckes",

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year = "2024",

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doi = "10.1016/j.mssp.2024.108579",

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TY - JOUR

T1 - Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

AU - Ziegelwanger, T.

AU - Reisinger, M.

AU - Matoy, K.

AU - Medjahed, A. A.

AU - Zalesak, J.

AU - Gruber, Manuel

AU - Meindlhumer, M.

AU - Keckes, J.

PY - 2024/10

Y1 - 2024/10

KW - Die bending strength

KW - Local residual stresses

KW - Nanosecond laser dicing

KW - Ultra-thin Si dies

KW - X-ray nanodiffraction

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U2 - 10.1016/j.mssp.2024.108579

DO - 10.1016/j.mssp.2024.108579

M3 - Article

AN - SCOPUS:85195318851

SN - 1369-8001

VL - 181

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 108579

ER -