C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices

Titel in Übersetzung: C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices

Andreas Nevosad, Michael Hofstätter, Manfred Wiessner, Peter Supancic, Christian Teichert

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in Konferenzband

6 Zitate (Scopus)

Titel in Übersetzung	C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices
Originalsprache	Englisch
Titel	Proc. of SPIE, Oxide-based Materials and Devices IV
Seiten	1-10
DOIs	https://doi.org/10.1117/12.2013532
Publikationsstatus	Veröffentlicht - 2013

Zugriff auf Dokument

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title = "C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices",

author = "Andreas Nevosad and Michael Hofst{\"a}tter and Manfred Wiessner and Peter Supancic and Christian Teichert",

year = "2013",

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T1 - C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices

AU - Nevosad, Andreas

AU - Hofstätter, Michael

AU - Wiessner, Manfred

AU - Supancic, Peter

AU - Teichert, Christian

PY - 2013

Y1 - 2013

U2 - http://dx.doi.org/10.1117/12.2013532

DO - http://dx.doi.org/10.1117/12.2013532

M3 - Conference contribution

SP - 1

EP - 10

BT - Proc. of SPIE, Oxide-based Materials and Devices IV

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