C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices

Titel in Übersetzung: C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in Konferenzband

6 Zitate (Scopus)

Titel in Übersetzung	C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices
Originalsprache	Englisch
Titel	Oxide-based Materials and Devices IV
Seiten	862618-1- 862618-8
DOIs	https://doi.org/10.1117/12.2013532
Publikationsstatus	Veröffentlicht - 2013

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@inproceedings{d6ee674d053b4235a477145a3d571af3,

title = "C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices",

author = "Andreas Nevosad",

year = "2013",

doi = "10.1117/12.2013532",

language = "English",

pages = "862618--1-- 862618--8",

booktitle = "Oxide-based Materials and Devices IV",

}