Characterization of silicon gate oxides by conducting atomic-force microscopy

Titel in Übersetzung: Characterization of silicon gate oxides by conducting atomic-force microscopy

S Kremmer, Christian Teichert, E Pischler, H Gold, Friedemar Kuchar, M Schatzmayr

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Begutachtung

39 Zitate (Scopus)

Titel in Übersetzung	Characterization of silicon gate oxides by conducting atomic-force microscopy
Originalsprache	Englisch
Seiten (von - bis)	168-172
Fachzeitschrift	Surface and interface analysis
Jahrgang	33
DOIs	https://doi.org/10.1002/sia.1183
Publikationsstatus	Veröffentlicht - 2002

Zugriff auf Dokument

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T1 - Characterization of silicon gate oxides by conducting atomic-force microscopy

AU - Kremmer, S

AU - Teichert, Christian

AU - Pischler, E

AU - Gold, H

AU - Kuchar, Friedemar

AU - Schatzmayr, M

PY - 2002

Y1 - 2002

U2 - 10.1002/sia.1183

DO - 10.1002/sia.1183

M3 - Article

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VL - 33

SP - 168

EP - 172

JO - Surface and interface analysis

JF - Surface and interface analysis

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