Characterization of silicon gate oxides by conducting atomic-force microscopy

Titel in Übersetzung: Characterization of silicon gate oxides by conducting atomic-force microscopy

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Begutachtung

39 Zitate (Scopus)

Titel in Übersetzung	Characterization of silicon gate oxides by conducting atomic-force microscopy
Originalsprache	Englisch
Seiten (von - bis)	168-172
Fachzeitschrift	Surface and interface analysis
Jahrgang	33
DOIs	https://doi.org/10.1002/sia.1183
Publikationsstatus	Veröffentlicht - 2002

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title = "Characterization of silicon gate oxides by conducting atomic-force microscopy",

author = "S Kremmer and Christian Teichert and E Pischler and H Gold and Friedemar Kuchar and M Schatzmayr",

year = "2002",

doi = "10.1002/sia.1183",

language = "English",

volume = "33",

pages = "168--172 ",

journal = "Surface and interface analysis",

issn = "0142-2421",

publisher = "John Wiley \& Sons, Gro{\ss}britannien",

}

TY - JOUR

T1 - Characterization of silicon gate oxides by conducting atomic-force microscopy

AU - Kremmer, S

AU - Teichert, Christian

AU - Pischler, E

AU - Gold, H

AU - Kuchar, Friedemar

AU - Schatzmayr, M

PY - 2002

Y1 - 2002

U2 - 10.1002/sia.1183

DO - 10.1002/sia.1183

M3 - Article

SN - 0142-2421

VL - 33

SP - 168

EP - 172

JO - Surface and interface analysis

JF - Surface and interface analysis

ER -