Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction

Michael Reisinger; Jakub Zalesak; Rostislav Daniel; M. Tomberger; J.K. Weiss; A.D. Darbal; M. Petrenec; J. Zechner; I. Daumiller; Werner Ecker; Bernhard  Sartory; Jozef Keckes

doi:10.1016/j.matdes.2016.06.001

Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction

Michael Reisinger
, Jakub Zalesak
, Rostislav Daniel
, M. Tomberger
, J.K. Weiss
, A.D. Darbal
, M. Petrenec
, J. Zechner
, I. Daumiller
, Werner Ecker
, Bernhard Sartory
, Jozef Keckes

Infineon Technologies AG Austria, Villach
AppFive LLC, Tempe, AZ, USA
TESCAN Brno s.r.o.
Materials Center Leoben Forschungs GmbH

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Begutachtung

9 Zitate (Scopus)

Originalsprache	Englisch
Seiten (von - bis)	476-481
Seitenumfang	6
Fachzeitschrift	Materials and Design
Jahrgang	106
DOIs	https://doi.org/10.1016/j.matdes.2016.06.001
Publikationsstatus	Veröffentlicht - 2016

Zugriff auf Dokument

10.1016/j.matdes.2016.06.001

Dieses zitieren

Reisinger, M., Zalesak, J., Daniel, R., Tomberger, M., Weiss, J. K., Darbal, A. D., Petrenec, M., Zechner, J., Daumiller, I., Ecker, W., Sartory, B., & Keckes, J. (2016). Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction. Materials and Design, 106, 476-481. https://doi.org/10.1016/j.matdes.2016.06.001

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title = "Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction",

author = "Michael Reisinger and Jakub Zalesak and Rostislav Daniel and M. Tomberger and J.K. Weiss and A.D. Darbal and M. Petrenec and J. Zechner and I. Daumiller and Werner Ecker and Bernhard Sartory and Jozef Keckes",

year = "2016",

doi = "10.1016/j.matdes.2016.06.001",

language = "English",

volume = "106",

pages = "476--481",

journal = "Materials and Design",

issn = "1873-4197",

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Reisinger, M, Zalesak, J, Daniel, R, Tomberger, M, Weiss, JK, Darbal, AD, Petrenec, M, Zechner, J, Daumiller, I, Ecker, W, Sartory, B & Keckes, J 2016, 'Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction', Materials and Design, Jg. 106, S. 476-481. https://doi.org/10.1016/j.matdes.2016.06.001

Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction. / Reisinger, Michael; Zalesak, Jakub; Daniel, Rostislav et al.
in: Materials and Design, Jahrgang 106, 2016, S. 476-481.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Begutachtung

TY - JOUR

T1 - Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction

AU - Reisinger, Michael

AU - Zalesak, Jakub

AU - Daniel, Rostislav

AU - Tomberger, M.

AU - Weiss, J.K.

AU - Darbal, A.D.

AU - Petrenec, M.

AU - Zechner, J.

AU - Daumiller, I.

AU - Ecker, Werner

AU - Sartory, Bernhard

AU - Keckes, Jozef

PY - 2016

Y1 - 2016

U2 - 10.1016/j.matdes.2016.06.001

DO - 10.1016/j.matdes.2016.06.001

M3 - Article

SN - 1873-4197

VL - 106

SP - 476

EP - 481

JO - Materials and Design

JF - Materials and Design

ER -