Zur Hauptnavigation wechseln Zur Suche wechseln Zum Hauptinhalt wechseln

Electrically reversible cracks in an intermetallic film controlled by an electric field

  • Z.Q. Liu
  • , J.H. Liu
  • , M.D. Biegalski
  • , J.-M. Hu
  • , S.L. Shang
  • , Y. Ji
  • , J.M. Wang
  • , S.L. Hsu
  • , A.T. Wong
  • , Megan Cordill
  • , B. Gludovatz
  • , C. Marker
  • , H. Yan
  • , Z.X. Feng
  • , L. You
  • , M.W. Lin
  • , T.Z. Ward
  • , Z.K. Liu
  • , C.B. Jiang
  • , L.Q. Chen
  • R.O. Ritchie, H.M. Christen, R. Ramesh
  • University of Science and Technology Beijing
  • Oak Ridge National Laboratory
  • The Pennsylvania State University
  • University of California, Berkeley
  • Erich-Schmid-Institut für Materialwissenschaft der Österreichischen Akademie der Wissenschaften
  • Universität Neusüdwales, Sydney
  • Universität für Wissenschaft und Technik Zentralchina

Publikation: Beitrag in FachzeitschriftArtikelForschungBegutachtung

36 Zitate (Scopus)

Abstract

Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on–off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.
OriginalspracheEnglisch
Aufsatznummer9
Seitenumfang7
FachzeitschriftNature Communications (e-only)
Jahrgang41.2018
Ausgabenummer9
DOIs
PublikationsstatusVeröffentlicht - 3 Jan. 2018

Dieses zitieren