Abstract
This work investigates the micromechanical deformation behavior of monocrystalline [1 0 0]-oriented silicon micropillars at high temperatures, focusing on the range between 500 °C and 900 °C. A significant reduction in material strength is observed with increasing temperature. Tests at varying strain rates indicate a change in the deformation mechanism with increasing temperature. Correlative post-deformation TEM characterization was employed to detail the microstructural origins. Indeed, a gradual transition was unveiled. While plasticity is almost exclusively dominated by twinning through the glide of leading Shockley partial dislocations at 500 °C, a gradual transition towards full dislocations is observed with increasing temperature. While this transition has been previously observed in macroscopic samples, this study further delves into the strain rate-dependent high-temperature plasticity of silicon at small scales, reporting valuable mechanistic data highly relevant for miniaturized silicon structures in modern information technology.
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 114730 |
| Seitenumfang | 11 |
| Fachzeitschrift | Materials and Design |
| Jahrgang | 258.2025 |
| Ausgabenummer | October |
| DOIs | |
| Publikationsstatus | Elektronische Veröffentlichung vor Drucklegung. - 11 Sept. 2025 |
Bibliographische Notiz
Publisher Copyright:© 2025 The Author(s)
UN SDGs
Dieser Output leistet einen Beitrag zu folgendem(n) Ziel(en) für nachhaltige Entwicklung
-
SDG 9 – Industrie, Innovation und Infrastruktur
Dieses zitieren
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver