Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures

Titel in Übersetzung: Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Begutachtung

2 Zitate (Scopus)

Titel in Übersetzung	Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures
Originalsprache	Englisch
Seiten (von - bis)	267-273
Fachzeitschrift	Applied surface science
Jahrgang	256
DOIs	https://doi.org/10.1016/j.apsusc.2009.08.013
Publikationsstatus	Veröffentlicht - 2009

Zugriff auf Dokument

@article{75b68e37270646c4acafc8d14b20564c,

title = "Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures",

author = "Christian Hofer and Christian Teichert and Jens Werner and Klara Lyutovich and Erich Kasper",

year = "2009",

doi = "10.1016/j.apsusc.2009.08.013",

language = "English",

volume = "256",

pages = "267--273",

journal = "Applied surface science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures

AU - Hofer, Christian

AU - Teichert, Christian

AU - Werner, Jens

AU - Lyutovich, Klara

AU - Kasper, Erich

PY - 2009

Y1 - 2009

U2 - 10.1016/j.apsusc.2009.08.013

DO - 10.1016/j.apsusc.2009.08.013

M3 - Article

SN - 0169-4332

VL - 256

SP - 267

EP - 273

JO - Applied surface science

JF - Applied surface science

ER -