Modeling SiC crystal growth and crucible etching in the PVT furnace

Publikation: Konferenzbeitrag › Poster › Forschung › Begutachtung

Originalsprache	Englisch
Publikationsstatus	Veröffentlicht - 2025
Veranstaltung	International Conference on Silicon Carbide and Related Materials (ICSCRM) 2025 - Busan, Südkorea Dauer: 14 Sept. 2025 → 19 Sept. 2025

Konferenz	International Conference on Silicon Carbide and Related Materials (ICSCRM) 2025
Land/Gebiet	Südkorea
Ort	Busan
Zeitraum	14/09/25 → 19/09/25

Dieses zitieren

@conference{31e9ab30d6f54e7b8c26e647964302bc,

title = "Modeling SiC crystal growth and crucible etching in the PVT furnace",

author = "Zaher Ramadan and Lorenz Taucher and N. Martirosyan and S. Lone and Lorenz Romaner",

year = "2025",

language = "English",

note = "International Conference on Silicon Carbide and Related Materials (ICSCRM) 2025 ; Conference date: 14-09-2025 Through 19-09-2025",

}