Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy

Titel in Übersetzung: Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Begutachtung

32 Zitate (Scopus)

Titel in Übersetzung	Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy
Originalsprache	Englisch
Seiten (von - bis)	88-93
Fachzeitschrift	Materials science and engineering B (Solid-state materials for advanced technology)
Jahrgang	102
Publikationsstatus	Veröffentlicht - 2003

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@article{17c4c0cd82fd48479631f76224d6cf6d,

title = "Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy",

author = "S. Kremmer and S. Peissl and C. Teichert and Friedemar Kuchar and C. Hofer",

year = "2003",

language = "English",

volume = "102",

pages = "88--93",

journal = "Materials science and engineering B (Solid-state materials for advanced technology)",

issn = "0921-5107",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy

AU - Kremmer, S.

AU - Peissl, S.

AU - Teichert, C.

AU - Kuchar, Friedemar

AU - Hofer, C.

PY - 2003

Y1 - 2003

M3 - Article

SN - 0921-5107

VL - 102

SP - 88

EP - 93

JO - Materials science and engineering B (Solid-state materials for advanced technology)

JF - Materials science and engineering B (Solid-state materials for advanced technology)

ER -