TY - JOUR
T1 - Pinaceae Fir Resins as Natural Dielectrics for Low Voltage Operating, Hysteresis-Free Organic Field Effect Transistors
AU - Ivić, Jelena
AU - Irimia, Cristian Vlad
AU - Kahraman, Bilge
AU - Kanbur, Yasin
AU - Bednorz, Mateusz
AU - Yumusak, Cigdem
AU - Aslam, Muhammad Awais
AU - Matković, Aleksandar
AU - Saller, Klara
AU - Schwarzinger, Clemens
AU - Schühly, Wolfgang
AU - Smeds, Annika I.
AU - Salinas, Yolanda
AU - Schiek, Manuela
AU - Mayr, Felix
AU - Xu, Chunlin
AU - Teichert, Christian
AU - Osiac, Mariana
AU - Serdar Sriciftci, Niyazi
AU - Stadlober, Barbara
AU - Irimia-Vladu, Mihai
N1 - Publisher Copyright:
© 2022 The Authors. Advanced Sustainable Systems published by Wiley-VCH GmbH.
PY - 2022/10
Y1 - 2022/10
N2 - Natural dielectrics are emerging nowadays as a niche selection of materials for applications targeting biocompatibility and biodegradability for electronics and sensors within the overall effort of scientific community to achieve sustainable development and to build environmental consciousness. The two natural resins analyzed in this study, silver fir and Rocky mountain fir demonstrate robust dielectric properties and excellent film forming capabilities, while being trap free dielectrics in high-performance organic field effect transistors (OFETs) operating at voltages as low as 1 V. Immense research possibilities are demonstrated through the avenue of inorganic nanofillers insertions in the natural resins film, that opens the door for fabrication of very low voltage OFETs with high dielectric constant insulating layers.
AB - Natural dielectrics are emerging nowadays as a niche selection of materials for applications targeting biocompatibility and biodegradability for electronics and sensors within the overall effort of scientific community to achieve sustainable development and to build environmental consciousness. The two natural resins analyzed in this study, silver fir and Rocky mountain fir demonstrate robust dielectric properties and excellent film forming capabilities, while being trap free dielectrics in high-performance organic field effect transistors (OFETs) operating at voltages as low as 1 V. Immense research possibilities are demonstrated through the avenue of inorganic nanofillers insertions in the natural resins film, that opens the door for fabrication of very low voltage OFETs with high dielectric constant insulating layers.
KW - bias stress
KW - high breakdown field
KW - hysteresis-free OFET
KW - natural dielectrics
KW - plant resins
KW - sustainable electronics
UR - http://www.scopus.com/inward/record.url?scp=85135102304&partnerID=8YFLogxK
U2 - 10.1002/adsu.202200234
DO - 10.1002/adsu.202200234
M3 - Article
SN - 2366-7486
VL - 6.2022
JO - Advanced Sustainable Systems
JF - Advanced Sustainable Systems
IS - 10
M1 - 2200234
ER -