SiC crystal growth simulations using the minimum atomic energy deposition method

Publikation: Konferenzbeitrag › Poster › Forschung › Begutachtung

Originalsprache	Englisch
Publikationsstatus	Veröffentlicht - 2025
Veranstaltung	International Conference on Silicon Carbide and Related Materials (ICSCRM) 2025 - Busan, Südkorea Dauer: 14 Sept. 2025 → 19 Sept. 2025

Konferenz	International Conference on Silicon Carbide and Related Materials (ICSCRM) 2025
Land/Gebiet	Südkorea
Ort	Busan
Zeitraum	14/09/25 → 19/09/25

Dieses zitieren

@conference{2cc35d9c971548468cf628fc93937a1a,

title = "SiC crystal growth simulations using the minimum atomic energy deposition method",

author = "Alexander Reichmann and Lorenz Romaner",

year = "2025",

language = "English",

note = "International Conference on Silicon Carbide and Related Materials (ICSCRM) 2025 ; Conference date: 14-09-2025 Through 19-09-2025",

}