Description
As 2D materials-based electronics evolve towards very large-scale integrated circuits, one of the major challenges is to achieve high quality contacts with 2D semiconductors. Carrier injection barriers, metal induced gap states and consequently Fermi level pinning at the electrode interfaces hinder the integration of 2D semiconductors. The intrinsic properties of the 2D channel material are seldom accessible, as usually most of the bias for carrier transport is used to overcome the contact-related junctions. Furthermore, in the case of polycrystalline films and assembled nanosheet networks, junctions between adjacent domains and nanosheets also govern the macroscopic response of the devices.This talk will focus on single crystalline MoS2, WSe2, PtSe2, and on liquid phase exfoliated and liquid-liquid interface assembled MoS2 nanosheet networks. We will review several possible electrode options, from organic self-assembled monolayers functionalized conventional metals [1], to van der Waals semi-metallic contacts [2,3]. The focus will be on ways to evaluate contact-related losses, considering macroscopic electrical measurements, device modeling, and local probing of the electrostatic potential by in-operando Kelvin probe force microscopy [1-4]. We will see how contact engineering can improve the properties of 2D semiconductor devices and also tailor carrier injection into 2D channels.
| Period | 23 May 2025 |
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| Event title | Advances Belgrade 2025 |
| Event type | Conference |
| Location | Belgrade, SerbiaShow on map |
| Degree of Recognition | International |