All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position

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Translated title of the contribution	All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position
Original language	English
Pages (from-to)	136402-136402
Journal	Physical review letters
Volume	95
DOIs	https://doi.org/10.1103/PhysRevLett.95.136402
Publication status	Published - 2005

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title = "All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position",

author = "S. Sharma and J.K. Dehwurst and Claudia Draxl",

year = "2005",

doi = "10.1103/PhysRevLett.95.136402",

language = "English",

volume = "95",

pages = "136402--136402",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

}

TY - JOUR

T1 - All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position

AU - Sharma, S.

AU - Dehwurst, J.K.

AU - Draxl, Claudia

PY - 2005

Y1 - 2005

U2 - 10.1103/PhysRevLett.95.136402

DO - 10.1103/PhysRevLett.95.136402

M3 - Article

SN - 0031-9007

VL - 95

SP - 136402

EP - 136402

JO - Physical review letters

JF - Physical review letters

ER -