All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes

Muhammad Awais Aslam, Simon Leitner, Shubham Tyagi, Alexandros Provias, Vadym Tkachuk, Egon Pavlica, Martina Dienstleder, Daniel Knez, Kenji Watanabe, Takashi Taniguchi, Dayu Yan, Youguo Shi, Theresia Knobloch, Michael Waltl, Udo Schwingenschlögl, Tibor Grasser, Aleksandar Matković

Research output: Contribution to journalArticleResearchpeer-review


Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.
Original languageEnglish
Pages (from-to)6529-6537
Number of pages9
JournalNano Letters
Issue number22
Publication statusPublished - 24 May 2024

Bibliographical note

Publisher Copyright: © 2024 The Authors. Published by American Chemical Society


  • contact resistance
  • graphene
  • graphite electrodes
  • Platinum diselenide
  • transistors

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