Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

T. Ziegelwanger; M. Reisinger; K. Matoy; A. A. Medjahed; J. Zalesak; Manuel Gruber; M. Meindlhumer; J. Keckes

doi:10.1016/j.mssp.2024.108579

Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

T. Ziegelwanger
, M. Reisinger
, K. Matoy
, A. A. Medjahed
, J. Zalesak
, Manuel Gruber
, M. Meindlhumer
, J. Keckes

Research output: Contribution to journal › Article › Research › peer-review

Original language	English
Article number	108579
Journal	Materials Science in Semiconductor Processing
Volume	181
DOIs	https://doi.org/10.1016/j.mssp.2024.108579
Publication status	Published - Oct 2024

Bibliographical note

Publisher Copyright:
© 2024

Keywords

Die bending strength
Local residual stresses
Nanosecond laser dicing
Ultra-thin Si dies
X-ray nanodiffraction

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10.1016/j.mssp.2024.108579

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@article{d7b66c7449ee48529b4b343c6d296372,

title = "Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si",

keywords = "Die bending strength, Local residual stresses, Nanosecond laser dicing, Ultra-thin Si dies, X-ray nanodiffraction",

author = "T. Ziegelwanger and M. Reisinger and K. Matoy and Medjahed, \{A. A.\} and J. Zalesak and Manuel Gruber and M. Meindlhumer and J. Keckes",

note = "Publisher Copyright: {\textcopyright} 2024",

year = "2024",

month = oct,

doi = "10.1016/j.mssp.2024.108579",

language = "English",

volume = "181",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

AU - Ziegelwanger, T.

AU - Reisinger, M.

AU - Matoy, K.

AU - Medjahed, A. A.

AU - Zalesak, J.

AU - Gruber, Manuel

AU - Meindlhumer, M.

AU - Keckes, J.

PY - 2024/10

Y1 - 2024/10

KW - Die bending strength

KW - Local residual stresses

KW - Nanosecond laser dicing

KW - Ultra-thin Si dies

KW - X-ray nanodiffraction

UR - https://www.scopus.com/pages/publications/85195318851

U2 - 10.1016/j.mssp.2024.108579

DO - 10.1016/j.mssp.2024.108579

M3 - Article

AN - SCOPUS:85195318851

SN - 1369-8001

VL - 181

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 108579

ER -

Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

Bibliographical note

Keywords

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Cite this