C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Translated title of the contribution	C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices
Original language	English
Title of host publication	Proc. of SPIE, Oxide-based Materials and Devices IV
Pages	1-10
DOIs	https://doi.org/10.1117/12.2013532
Publication status	Published - 2013

Access to Document

@inproceedings{79caeb5e4f4b4e1d98b73c058f6b4712,

title = "C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices",

author = "Andreas Nevosad and Michael Hofst{\"a}tter and Manfred Wiessner and Peter Supancic and Christian Teichert",

year = "2013",

doi = "10.1117/12.2013532",

language = "English",

pages = "1--10",

booktitle = "Proc. of SPIE, Oxide-based Materials and Devices IV",

}

TY - GEN

T1 - C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices

AU - Nevosad, Andreas

AU - Hofstätter, Michael

AU - Wiessner, Manfred

AU - Supancic, Peter

AU - Teichert, Christian

PY - 2013

Y1 - 2013

U2 - 10.1117/12.2013532

DO - 10.1117/12.2013532

M3 - Conference contribution

SP - 1

EP - 10

BT - Proc. of SPIE, Oxide-based Materials and Devices IV

ER -