C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Translated title of the contribution	C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices
Original language	English
Title of host publication	Oxide-based Materials and Devices IV
Pages	862618-1- 862618-8
DOIs	https://doi.org/10.1117/12.2013532
Publication status	Published - 2013

Access to Document

@inproceedings{d6ee674d053b4235a477145a3d571af3,

title = "C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices",

author = "Andreas Nevosad",

year = "2013",

doi = "10.1117/12.2013532",

language = "English",

pages = "862618--1-- 862618--8",

booktitle = "Oxide-based Materials and Devices IV",

}