Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy

G. Brauer; W. Anwand; W. Skorupa; S. Brandstetter; Christian Teichert

doi:10.1063/1.2161940

Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy

G. Brauer, W. Anwand, W. Skorupa, S. Brandstetter, Christian Teichert

Chair of Physics (460)

Research output: Contribution to journal › Article › Research › peer-review

10 Citations (Scopus)

Translated title of the contribution	Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy
Original language	English
Pages (from-to)	023523-1-023523-8
Journal	Journal of applied physics
Volume	99
DOIs	https://doi.org/10.1063/1.2161940
Publication status	Published - 2006

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10.1063/1.2161940

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@article{4614329830f84b63bca4b35301248357,

title = "Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy",

author = "G. Brauer and W. Anwand and W. Skorupa and S. Brandstetter and Christian Teichert",

year = "2006",

doi = "10.1063/1.2161940",

language = "English",

volume = "99",

pages = "023523--1--023523--8",

journal = "Journal of applied physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy

AU - Brauer, G.

AU - Anwand, W.

AU - Skorupa, W.

AU - Brandstetter, S.

AU - Teichert, Christian

PY - 2006

Y1 - 2006

U2 - 10.1063/1.2161940

DO - 10.1063/1.2161940

M3 - Article

SN - 0021-8979

VL - 99

SP - 023523-1-023523-8

JO - Journal of applied physics

JF - Journal of applied physics

ER -