Characterization of silicon gate oxides by conducting atomic-force microscopy

S Kremmer, Christian Teichert, E Pischler, H Gold, Friedemar Kuchar, M Schatzmayr

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Translated title of the contribution	Characterization of silicon gate oxides by conducting atomic-force microscopy
Original language	English
Pages (from-to)	168-172
Journal	Surface and interface analysis
Volume	33
DOIs	https://doi.org/10.1002/sia.1183
Publication status	Published - 2002

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@article{7ab935d582424b9294ad20998f48c68f,

title = "Characterization of silicon gate oxides by conducting atomic-force microscopy",

author = "S Kremmer and Christian Teichert and E Pischler and H Gold and Friedemar Kuchar and M Schatzmayr",

year = "2002",

doi = "10.1002/sia.1183",

language = "English",

volume = "33",

pages = "168--172 ",

journal = "Surface and interface analysis",

issn = "0142-2421",

publisher = "John Wiley & Sons, Gro{\ss}britannien",

}

TY - JOUR

T1 - Characterization of silicon gate oxides by conducting atomic-force microscopy

AU - Kremmer, S

AU - Teichert, Christian

AU - Pischler, E

AU - Gold, H

AU - Kuchar, Friedemar

AU - Schatzmayr, M

PY - 2002

Y1 - 2002

U2 - 10.1002/sia.1183

DO - 10.1002/sia.1183

M3 - Article

SN - 0142-2421

VL - 33

SP - 168

EP - 172

JO - Surface and interface analysis

JF - Surface and interface analysis

ER -