Delayed failure behaviour of the ESIS silicon nitride reference material at 1200 °C in air

J. Kovalcík, J. Dusza, T. Lube, R. Danzer

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)871-875
Number of pages5
JournalMaterials letters
Volume58
Issue number6
DOIs
Publication statusPublished - 1 Feb 2004

Keywords

  • Delayed failure
  • Silicon nitride
  • Slow crack growth creep
  • Time to failure

Cite this