Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures

V. S. Lysenko; Yu V. Gomeniuk; Yu. N. Kozyrev; M. Yu. Rubezhanska; V.K. Sklyar; S.V. Kondratenko; Ye.Ye. Melnichuk; Christian Teichert

doi:10.4028/www.scientific.net/AMR.276.179

Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures

V. S. Lysenko, Yu V. Gomeniuk, Yu. N. Kozyrev, M. Yu. Rubezhanska, V.K. Sklyar, S.V. Kondratenko, Ye.Ye. Melnichuk, Christian Teichert

Chair of Physics (460)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Translated title of the contribution	Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures
Original language	English
Title of host publication	Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices
Subtitle of host publication	selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine
Pages	179-186
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.276.179
Publication status	Published - 2011

Publication series

Name	Advanced materials research
Volume	276
ISSN (Print)	1662-8985

Access to Document

10.4028/www.scientific.net/AMR.276.179

Cite this

Lysenko, V. S., Gomeniuk, Y. V., Kozyrev, Y. N., Rubezhanska, M. Y., Sklyar, V. K., Kondratenko, S. V., Melnichuk, Y. Y., & Teichert, C. (2011). Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures. In Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine (pp. 179-186). (Advanced materials research; Vol. 276). https://doi.org/10.4028/www.scientific.net/AMR.276.179

Lysenko, V. S. ; Gomeniuk, Yu V. ; Kozyrev, Yu. N. et al. / Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures. Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine . 2011. pp. 179-186 (Advanced materials research).

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title = "Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures",

author = "Lysenko, {V. S.} and Gomeniuk, {Yu V.} and Kozyrev, {Yu. N.} and Rubezhanska, {M. Yu.} and V.K. Sklyar and S.V. Kondratenko and Ye.Ye. Melnichuk and Christian Teichert",

year = "2011",

doi = "10.4028/www.scientific.net/AMR.276.179",

language = "English",

isbn = "978-3-03785-178-4",

series = "Advanced materials research",

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booktitle = "Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices",

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Lysenko, VS, Gomeniuk, YV, Kozyrev, YN, Rubezhanska, MY, Sklyar, VK, Kondratenko, SV, Melnichuk, YY & Teichert, C 2011, Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures. in Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine . Advanced materials research, vol. 276, pp. 179-186. https://doi.org/10.4028/www.scientific.net/AMR.276.179

Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures. / Lysenko, V. S.; Gomeniuk, Yu V.; Kozyrev, Yu. N. et al.
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine . 2011. p. 179-186 (Advanced materials research; Vol. 276).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures

AU - Lysenko, V. S.

AU - Gomeniuk, Yu V.

AU - Kozyrev, Yu. N.

AU - Rubezhanska, M. Yu.

AU - Sklyar, V.K.

AU - Kondratenko, S.V.

AU - Melnichuk, Ye.Ye.

AU - Teichert, Christian

PY - 2011

Y1 - 2011

U2 - 10.4028/www.scientific.net/AMR.276.179

DO - 10.4028/www.scientific.net/AMR.276.179

M3 - Conference contribution

SN - 978-3-03785-178-4

T3 - Advanced materials research

SP - 179

EP - 186

BT - Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices

ER -

Lysenko VS, Gomeniuk YV, Kozyrev YN, Rubezhanska MY, Sklyar VK, Kondratenko SV et al. Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures. In Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine . 2011. p. 179-186. (Advanced materials research). doi: 10.4028/www.scientific.net/AMR.276.179