Effects of polymethylmethacrylate-transfer residues on the growth of organic semiconductor molecules on chemical vapor deposited graphene

Markus Kratzer; Bernhard C. Bayer; Piran R. Kidambi; Aleksandar Matkovic; Rados Gajic; Andrea Cabrero-Vilatela; Robert S. Weatherup; Stephan Hofmann; Christian Teichert

doi:10.1063/1.4913948

Effects of polymethylmethacrylate-transfer residues on the growth of organic semiconductor molecules on chemical vapor deposited graphene

Markus Kratzer
, Bernhard C. Bayer
, Piran R. Kidambi
, Aleksandar Matkovic
, Rados Gajic
, Andrea Cabrero-Vilatela
, Robert S. Weatherup
, Stephan Hofmann
, Christian Teichert

Chair of Physics (460)

Research output: Contribution to journal › Article › Research › peer-review

51 Citations (Scopus)

Original language	English
Journal	Applied physics letters
Volume	106
Issue number	10
DOIs	https://doi.org/10.1063/1.4913948
Publication status	Published - 9 Mar 2015

Access to Document

10.1063/1.4913948

Cite this

@article{3722bb4ebc3d4c07802afbadc7676604,

title = "Effects of polymethylmethacrylate-transfer residues on the growth of organic semiconductor molecules on chemical vapor deposited graphene",

author = "Markus Kratzer and Bayer, \{Bernhard C.\} and Kidambi, \{Piran R.\} and Aleksandar Matkovic and Rados Gajic and Andrea Cabrero-Vilatela and Weatherup, \{Robert S.\} and Stephan Hofmann and Christian Teichert",

year = "2015",

month = mar,

day = "9",

doi = "10.1063/1.4913948",

language = "English",

volume = "106",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Effects of polymethylmethacrylate-transfer residues on the growth of organic semiconductor molecules on chemical vapor deposited graphene

AU - Kratzer, Markus

AU - Bayer, Bernhard C.

AU - Kidambi, Piran R.

AU - Matkovic, Aleksandar

AU - Gajic, Rados

AU - Cabrero-Vilatela, Andrea

AU - Weatherup, Robert S.

AU - Hofmann, Stephan

AU - Teichert, Christian

PY - 2015/3/9

Y1 - 2015/3/9

U2 - 10.1063/1.4913948

DO - 10.1063/1.4913948

M3 - Article

SN - 0003-6951

VL - 106

JO - Applied physics letters

JF - Applied physics letters

IS - 10

ER -