Electronic structure of 1T-TiSe.

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Translated title of the contribution	Electronic structure of 1T-TiSe.
Original language	English
Pages (from-to)	14833-14836
Journal	Physical review : B, Condensed matter and materials physics
Volume	59
DOIs	https://doi.org/10.1103/PhysRevB.59.14833
Publication status	Published - 1999

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@article{9eb521fa88974de9a1b6125f00d46af6,

title = "Electronic structure of 1T-TiSe.",

author = "Sangeeta Sharma and T. Nautiyal and G.S. Singh and S. Auluck and P. Blaha and Claudia Draxl",

year = "1999",

doi = "10.1103/PhysRevB.59.14833",

language = "English",

volume = "59",

pages = "14833--14836",

journal = "Physical review : B, Condensed matter and materials physics",

issn = "0163-1829",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Electronic structure of 1T-TiSe.

AU - Sharma, Sangeeta

AU - Nautiyal, T.

AU - Singh, G.S.

AU - Auluck, S.

AU - Blaha, P.

AU - Draxl, Claudia

PY - 1999

Y1 - 1999

U2 - 10.1103/PhysRevB.59.14833

DO - 10.1103/PhysRevB.59.14833

M3 - Article

SN - 0163-1829

VL - 59

SP - 14833

EP - 14836

JO - Physical review : B, Condensed matter and materials physics

JF - Physical review : B, Condensed matter and materials physics

ER -