Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy

Research output: Contribution to conferencePosterResearchpeer-review

Translated title of the contributionGrowth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy
Original languageEnglish
Publication statusPublished - 2010
EventIn situ characterization of near-surface processes - Eisenerz, Austria
Duration: 30 May 20103 Jun 2010

Conference

ConferenceIn situ characterization of near-surface processes
Country/TerritoryAustria
CityEisenerz
Period30/05/103/06/10

Cite this