Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy

Research output: Contribution to conference › Poster › Research › peer-review

Translated title of the contribution	Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy
Original language	English
Publication status	Published - 2010
Event	In situ characterization of near-surface processes - Eisenerz, Austria Duration: 30 May 2010 → 3 Jun 2010

Conference	In situ characterization of near-surface processes
Country/Territory	Austria
City	Eisenerz
Period	30/05/10 → 3/06/10

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