High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N

J. I. Hwang; Y. Ishida; M. Kobayashi; H. Hirata; K. Takubo; T. Mizokawa; A. Fujimori; J. Okamoto; K. Mamiya; Y. Saito; Y. Muramatsu; Holger Ott; A. Tanaka; T. Kondo; H. Munekata

doi:10.1103/PhysRevB.72.085216

High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N

J. I. Hwang
, Y. Ishida
, M. Kobayashi
, H. Hirata
, K. Takubo
, T. Mizokawa
, A. Fujimori
, J. Okamoto
, K. Mamiya
, Y. Saito
, Y. Muramatsu
, Holger Ott
, A. Tanaka
, T. Kondo
, H. Munekata

University of Tokyo
Japan Atomic Energy Research Institute, Sayo-gun
Freie Universität Berlin
Department of Quantum Matter
Institute of Science Tokyo

Research output: Contribution to journal › Article › Research › peer-review

Abstract

We have studied the electronic structure of the diluted magnetic semiconductor Ga1-x Mnx N (x=0.0, 0.02, and 0.042) grown on Sn-doped n -type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L -edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a Mn N4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-x Mnx N is stronger than that in Ga1-x Mnx As.

Original language	English
Article number	085216
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	2005
Issue number	Volume 72, Issue 8
DOIs	https://doi.org/10.1103/PhysRevB.72.085216
Publication status	Published - 15 Aug 2005
Externally published	Yes

Access to Document

10.1103/PhysRevB.72.085216

Cite this

Hwang, J. I., Ishida, Y., Kobayashi, M., Hirata, H., Takubo, K., Mizokawa, T., Fujimori, A., Okamoto, J., Mamiya, K., Saito, Y., Muramatsu, Y., Ott, H., Tanaka, A., Kondo, T., & Munekata, H. (2005). High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N. Physical Review B - Condensed Matter and Materials Physics, 2005(Volume 72, Issue 8), Article 085216. https://doi.org/10.1103/PhysRevB.72.085216

@article{4fc259a4a73542d4a6c68bfc3d7f8d3a,

title = "High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N",

abstract = "We have studied the electronic structure of the diluted magnetic semiconductor Ga1-x Mnx N (x=0.0, 0.02, and 0.042) grown on Sn-doped n -type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L -edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a Mn N4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-x Mnx N is stronger than that in Ga1-x Mnx As.",

author = "Hwang, \{J. I.\} and Y. Ishida and M. Kobayashi and H. Hirata and K. Takubo and T. Mizokawa and A. Fujimori and J. Okamoto and K. Mamiya and Y. Saito and Y. Muramatsu and Holger Ott and A. Tanaka and T. Kondo and H. Munekata",

year = "2005",

month = aug,

day = "15",

doi = "10.1103/PhysRevB.72.085216",

language = "English",

volume = "2005",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Institute of Physics",

number = "Volume 72, Issue 8",

}

Hwang, JI, Ishida, Y, Kobayashi, M, Hirata, H, Takubo, K, Mizokawa, T, Fujimori, A, Okamoto, J, Mamiya, K, Saito, Y, Muramatsu, Y, Ott, H, Tanaka, A, Kondo, T & Munekata, H 2005, 'High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N', Physical Review B - Condensed Matter and Materials Physics, vol. 2005, no. Volume 72, Issue 8, 085216. https://doi.org/10.1103/PhysRevB.72.085216

TY - JOUR

T1 - High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N

AU - Hwang, J. I.

AU - Ishida, Y.

AU - Kobayashi, M.

AU - Hirata, H.

AU - Takubo, K.

AU - Mizokawa, T.

AU - Fujimori, A.

AU - Okamoto, J.

AU - Mamiya, K.

AU - Saito, Y.

AU - Muramatsu, Y.

AU - Ott, Holger

AU - Tanaka, A.

AU - Kondo, T.

AU - Munekata, H.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - We have studied the electronic structure of the diluted magnetic semiconductor Ga1-x Mnx N (x=0.0, 0.02, and 0.042) grown on Sn-doped n -type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L -edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a Mn N4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-x Mnx N is stronger than that in Ga1-x Mnx As.

AB - We have studied the electronic structure of the diluted magnetic semiconductor Ga1-x Mnx N (x=0.0, 0.02, and 0.042) grown on Sn-doped n -type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L -edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a Mn N4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-x Mnx N is stronger than that in Ga1-x Mnx As.

UR - https://www.scopus.com/pages/publications/33644958424

U2 - 10.1103/PhysRevB.72.085216

DO - 10.1103/PhysRevB.72.085216

M3 - Article

AN - SCOPUS:33644958424

SN - 1098-0121

VL - 2005

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - Volume 72, Issue 8

M1 - 085216

ER -

High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N

Abstract

Access to Document

Other files and links

Cite this