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Natural dielectrics for organic field effect transistors: a study on resins derived from larch, spruce and Atlas cedar Pinaceae trees

  • Corina Schimanofsky
  • , Andreas Petritz
  • , Boyuan Ban
  • , Cristian Vlad Irimia
  • , Rosarita D’Orsi
  • , Cigdem Yumusak
  • , Felix Mayr
  • , Yasin Kanbur
  • , Sunwoo Kim
  • , Alessandra Operamolla
  • , Klara Saller
  • , Manuela Schiek
  • , Yolanda Salinas
  • , Oliver Brüggemann
  • , Karl Christian Teichert
  • , Chunlin Xu
  • , Bong Sup Shim
  • , Clemens Schwarzinger
  • , Barbara Stadlober
  • , Niyazi Serdar Sariciftci
  • Mihai Irimia-Vladu
  • Institute of Applied Physics
  • Institute for Water Resources Management Hydrogeology and Geophysics
  • CD-Laboratory for Fatigue Analysis
  • Institute of Solid State Physics, Chinese Academy of Sciences
  • Università di Pisa
  • Karabük University
  • Inha University
  • IMC Krems University of Applied Sciences
  • Åbo Akademi University

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Three Pinaceae resins originating from trees of high industrial significance—European larch, European spruce, and Atlas cedar—were examined in this work. These resins exhibited ease of processing using ethyl alcohol solutions, exceptional film formation, and great dielectric qualities with measured breakdown fields in the range of 5-7.3 MV cm−1. Because their film surface was essentially trap-free, it was possible to fabricate organic field effect transistors that are hysteresis-free and have outstanding stability under 12-hour bias stress at working voltages below 10 V, with current retention approaching 90% of the original value and transfer curve recovery occurring within 90 minutes. These environmentally friendly materials, which are freely available, are a great option for applications aiming to produce sustainable electronics.
Original languageEnglish
Pages (from-to)6269-6290
Number of pages22
JournalMaterials Advances
Volume2025
Issue numberVolume 6, Issue 18
Early online date25 Jun 2025
DOIs
Publication statusPublished - 15 Sept 2025

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