Monocrystalline silicon wafer are rudimental in micro and nanoelectronics for the production of almost all electronic components. Also the growing photovoltaic market demands considerable quantities of monocrystalline silicon, which is produced by float zone or Czochralski crystal growth. Charging crucibles with different grades of poly silicon leads to a significant exposure of the employees to silicon dust. The theme of this diploma thesis is the development of an exhaust to achieve better working conditions. Using the particle sampler Respicon it was possible to compare the different types of poly silicon in respect of the formation of dust and a microscopic analysis was accomplished. Several approaches were compared with regard to efficiency, effort and suitability for daily use. Tests were carried out to study the performance of prototypes. For the dimensioning of an effective exhaust a calculation of air speeds and volume flow rate was made and verified with the simulation software fluent. Subsequently the selected construction was tested for its suitability for daily use. All tests were carried out for Siltronic AG in Burghausen.
|Translated title of the contribution||Dust exposure reduction during the production of monocrystalline silicon|
|Award date||18 Dec 2009|
|Publication status||Published - 2009|
Bibliographical noteembargoed until null
- silicon single crystal Czochralski dust dust measurement Respicon crucible charging exhaust