Strain-induced effects on the electronic structure and n K-edge ELNES of wurtzite AlN and AlxGa1-xN

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Translated title of the contribution	Strain-induced effects on the electronic structure and n K-edge ELNES of wurtzite AlN and AlxGa1-xN
Original language	English
Title of host publication	Proceeding of International Conference on Microscopy of Semiconducting Materials 2011
Pages	1-4
DOIs	https://doi.org/10.1088/1742-6596/326/1/012016
Publication status	Published - 2011

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@inproceedings{40ed3faa159d45a89fe5c458f145c798,

title = "Strain-induced effects on the electronic structure and n K-edge ELNES of wurtzite AlN and AlxGa1-xN",

author = "M. Petrov and David Holec and L. Lymperakis and J Neugebauer and C.J. Humphreys",

year = "2011",

doi = "10.1088/1742-6596/326/1/012016",

language = "English",

pages = "1--4",

booktitle = "Proceeding of International Conference on Microscopy of Semiconducting Materials 2011",

}

TY - GEN

T1 - Strain-induced effects on the electronic structure and n K-edge ELNES of wurtzite AlN and AlxGa1-xN

AU - Petrov, M.

AU - Holec, David

AU - Lymperakis, L.

AU - Neugebauer, J

AU - Humphreys, C.J.

PY - 2011

Y1 - 2011

U2 - 10.1088/1742-6596/326/1/012016

DO - 10.1088/1742-6596/326/1/012016

M3 - Conference contribution

SP - 1

EP - 4

BT - Proceeding of International Conference on Microscopy of Semiconducting Materials 2011

ER -