Abstract
The thermal expansion coefficients (TECs) of B1 structured Ti1 − xAlxN and Cr1 − xAlxN thin films – investigated by synchrotron X-ray diffraction from room temperature to 600 °C – excellently agree with ab initio obtained temperature dependent calculations only if they were annealed at 600 °C. As-deposited thin films, with their built-in structural defects show a lower temperature dependence of their TECs and higher values. Furthermore, our data clearly show that the TECs of cubic Ti1 − xAlxN and Cr1 − xAlxN increase with increasing Al content, and that the TEC of wurtzite type B4 structured AlN is only about half of that of B1 AlN.
Original language | English |
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Pages (from-to) | 182-185 |
Number of pages | 4 |
Journal | Scripta materialia |
Volume | 127.2017 |
Issue number | 15 January |
DOIs | |
Publication status | Published - 2017 |